1 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet general description the APT13003H seri es are high voltage, high speed switching npn power transistors specially designed for off-line switch mode power supplies with low out- put power. the APT13003H series are available in to-92 and to-126 packages. features high switching speed high collector-emitter voltage low cost applications battery chargers for mobile phone of bcd solution power supply for dvd/stb of bcd solution figure 1. package types of APT13003H figure 2. pin config uration of APT13003H pin configuration to-92 to-92 (ammo packing) to-126 u package (to-126) (bulk packing) 1 2 3 base emitter collector 1 2 3 base emitter collector z package z package (to-92 (bulk packing)) (to-92 (ammo packing)) 3 2 1 emitter base collector
2 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet parameter symbol value unit collector-emitter voltage (v be =0) v ces 800 v collector-emitter voltage (i b =0) v ceo 465 v emitter-base voltage (i c =0) v ebo 9v collector current i c 1.5 a collector peak current (pulse) (note 2) i cm 3a base current i b 0.75 a base peak current (pulse) (note 2) i bm 1.5 a power dissipation, t a =25 o c for to-92 p tot 1.1 w power dissipation, t c =25 o c for to-126 p tot 20 w operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent dama ge to the device. these are stress ratings only, and functiona l operation of the device at these or a ny other conditions beyond those indicated under "recommended operating co nditions" is not implied. exposure to "abs olute maximum ratings" for extended periods may affect device reliability. note 2: pulse test for pulse width < 5ms, duty cycle 10%. absolute maximum ratings (note 1) ordering information package part number marking id packing type to-92 APT13003Hz-g1 13003hz-g1 bulk APT13003Hztr-g1 13003hz-g1 ammo to-126 APT13003Hu-g1 gu13003h bulk circuit type h: APT13003H apt13003 - tr: ammo blank: bulk package z: to-92 u: to-126 g1: green bcd semiconductor's products, as designate d with "g1" suffix in the part num ber, are rohs compliant and green.
high voltage fast switching npn power transistor APT13003H data sheet 3 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol value unit thermal resistance (junction-to-case) for to-92 jc 83.3 o c/w for to-126 6.25 thermal resistance (junction-to-ambient) for to-92 ja 113.6 o c/w for to-126 96 thermal characteristics parameter symbol conditions min typ max unit collector cut-off current (v be =-1.5v) i cev v ce =800v 10 a collector-emitter sustaining vo l t a g e ( i b =0) v ceo (sus) i c =100 a 465 v collector-emitter saturation voltage (note 3) v ce (sat) i c =0.5a, i b =0.1a 0.17 0.3 v i c =1.0a, i b =0.25a 0.29 0.4 base-emitter saturation voltage (note 3) v be (sat) i c =0.5a, i b =0.1a 1.0 v i c =1.0a, i b =0.25a 1.2 dc current gain (note 3) h fe i c =0.3a, v ce =2v 15 i c =0.5a, v ce =2v 131730 i c =1.0a, v ce =2v 5 25 output capacitance c ob v cb =10v, f=0.1mh z 16 pf current gain bandwidth product f t v ce =10v, i c =0.1a 4 mhz turn-on time with resistive load ton i c =1a, v cc =125v, i b1 =0.2a, i b2 =-0.2a, t p =25 s 0.3 1 s storage time with resistive load ts 1.8 3 fall time with resistive load tf 0.28 0.4 ( t c =25 o c, unless otherwise specified.) electrical characteristics note 3: pulse test for pulse width 300 s, duty cycle 2%.
4 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet figure 5. power derating curve fig ure 6. static characteristics typical performance characteristics figure 3. safe operating areas (to-92 package) figure 4. safe operating areas (to-126 package) 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 power derating factor (%) case temperature t c ( o c) 1 10 100 1000 1e-3 0.01 0.1 1 10 dc collector current i c (a) collector-emitter clamp voltage v ce (v) 012345 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i b =400ma i b =300ma i b =250ma i b =200ma i b =150ma i b =100ma i b =50ma collector current i c (a) collector-emitter voltage v ce (v) 1 10 100 1000 0.01 0.1 1 10 dc collector current i c (a) collector-emitter clamp voltage v ce (v)
high voltage fast switching npn power transistor APT13003H data sheet 5 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited figure 7. dc current gain vs. collector current typical performance ch aracteristics (continued) figure 9. base-emitter saturation voltage figure 10. h fe vs. case temperature figure 8. collector-emitter saturation voltage 0.1 1 0.01 0.1 1 10 t j =125 o c collector-emitter voltage v ce (v) collector current i c (a) h fe =5 t j =25 o c 0.01 0.1 1 0 5 10 15 20 25 30 35 40 t a =25 o c t a =125 o c collector current i c (a) dc current gain v ce =5v v ce =1v 25 50 75 100 125 150 10 12 14 16 18 20 v ce =2v, i c =0.5a h fe case temperature ( o c) 1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 t j =125 o c base-emitter voltage v be (v) collector current i c (a) h fe =5 t j =25 o c
6 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet mechanical dimensions to-92 (bulk packing) unit: mm(inch) 2.420(0. 095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0. 039) 1.400(0. 055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015)
7 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet mechanical dimens ions (continued) to-92 (ammo packing) unit: mm(inch) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
8 aug. 2011 rev. 1. 1 bcd semiconductor manufacturing limited high voltage fast switching npn power transistor APT13003H data sheet to-126 unit: mm(inch) mechanical dimens ions (continued) 1.060(0.042) 1.500(0.059) 2.400(0.094) 2.900(0.114) 0.400(0.016) 0.600(0.024) 7.400(0.291) 8.200(0.323) 3.600(0.142) 10.600(0.417) 11.200(0.440) 0.660(0.026) 0.860(0.034) 14.500(0.570) 15.900(0.626) 1.700(0.067) 2.100(0.083) 1.170(0.046) 1.470(0.058) 2.280(0.090) typ 4.560(0.180) typ. 3.100(0.122) 3.550(0.140) 0.300(0.012) 0.000(0.000) 3.900(0.154)
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